Analysis And Simulation Of Quantum Mechanical Effects In Nano-scale MOSFETs

In this thesis, the physical mechanism and the quantum corrected model of the advanced nano-scale bulk MOSFETs is represented. The gate leakage current induced by direct tunneling and the degradation of the gate capacitor induced by energy quantization are simulated using the self-consistent method by solving the coupled Poisson and Schr?dinger equations.The quantum mechanism effects on the carrier distribution are studied by self-consistent solving the coupled Poisson and Schr?dinger equations. The relationship between the charge density and gate bias in MOSFETs is then simulated. Based on these results, the quantum capacitor-voltage model including the quantum mechanism effects is derived, and the capacitor-voltage characteristics of the bulk MOS devices are simulated. The analytical results of the gate tunneling are modified in quantum theory, the impact of the different gate electrodes on the gate direct tunneling current is simulated as well as the different gate insulation materials. Results from this model show a good agreement with the experimental results and the numeric simulation results of both long-channel and short-channel MOSFETs, and the simulation results shows the advantages of high-κgate dielectrics over traditional oxide.The simulation results in this thesis provide the strong guides for the development of the physics-based models and the comprehensive understanding to the scaled MOS devices, and pave the way to the novel device concepts and the innovative structure design in nano-MOSFET age.