Prepared TiN Thin Films By LTP Enhanced Electronic Beam Evaporation

TiN, which is golden in color, has been widely used in machinery, MicroelectronicManufacturing Industry, jewelry and decoration, glass manufacturing industry and other fields,due to its high hardness, high melting temperature, high thermal and electrical conductivity, andgood resistance to corrosion, abrasion, and oxidation.TiN thin film is mainly prepared with deposition methods, such as physical vapor deposition(PVD), plasma chemical vapour deposition (PCVD), Radio-frequency sputter deposition (RSD),ion beam enhanced deposition (IBED), and so on. Nano-structure TiN thin film in this experimentwill be prepared at room-temperature, applying the high vacuum evaporating technology, the tapecarrier package (TCP) which can produce plasma sources with high density, and the electronicbeam magnetic deflection technology.The equipment and principle of low-temperature plasma enhanced electronic beamevaporation & deposition coating adopted in this experiment will be introduced first. ThenLangmuir probe will be used in vacuum coating room to recognize the spatial distribution andaxial distribution of plasma, and rules of the density of plasma varied with diverse air pressureand radio-frequency power. Then the method of OSE is adopted to analyze the activecomponents in Ar plasma and N₂ plasma in the vacuum reaction room, the pressure of nitrogen,and the spectrum of nitrogen plasma when Radio-frequency of plasma source exists. Thediagnosis of Langmuir probe shows that particles in outer hole and middle hole take moreadvantages in ionization and compounding, and their density changes a lot there. While thedensity of particles in inner hole is well-proportioned, and seldom changes. The analysis ofemission spectrum indicates that the plasma of argon and nitrogen contains the excited state ofAr, Ar+, N+, N₂+, N₂ molecules and nitrogen atom. The analyses of Langmuir probe andemission spectrum on pressure and radio-frequency come to the same conclusion that improvingpower is a direct and effective way to markedly increase the ion density; an increase of pressurecan lead to a slow increase of the density of plasma. Consequently the ideal preparing parameterfor evaporating and coating of TiN thin film will be concluded.TiN coatings were produced under diverse deposition temperature, deposition time, anddiverse gas flow, as well as diverse bias. The result of Fourier Transform Infrared Spectroscopy(FTIR) analysis indicates that there has no absorption peak in the coating due to Ti-N stretch.Based on the analysis made by Atomic Force Microscope (AFM), it is concluded that thedeposition rate of TiN thin film can be improved, the grain size can be increased, and the density of thin film can be preserved by fortifying the nitrogen flux, raising the temperature, andincreasing bias and deposition time. The analysis on nano TiN thin film made by X-raydiffraction equipment shows that the insufficient nitrogen flux and evaporating time, and theroom temperature are not propitious to produce TiN grains. While, TiN grains can be made whennitrogen flux is increased and evaporating time gets longer even if it is room temperature, viceversa. So high temperature is a favorable condition for producingTiN grains. Thickness Gages(XP-1) tells after examining nano TiN thin film that proper advanced temperature can improveits roughness and depositing.