Investigation And Parameter Optimization Of PTCDA/p-Si Photodetector

3,4,9, 10-perylenetetracarboxylic dianhydride (PTCDA), anaromatic compound, is a kind of powder-shaped red and monoclinic p-type material for organic semiconductor. It' s band-gap is 2. 2ev. this material has good photoelectrical property , so it suitable for made of semiconductor photoelectrical device. This paper mainly discuss the manufacture and parameter optimization of PTCDA/P-Si photodetector.At first, we analyzed the fundamentals as well as parameters of this photodecter; then discussed the electrical characteristics of the potential between PTCDA and P-Si, also it' s band structure at forward/reverse bias. Later we introduced the manufacture process of this photodetecter; finally we optimized the photodecter from below aspects:1. analyzed the surface morphology of PTCDA deposited on P-Si at different temperature by AFM, at the same time investigated the influence of substrate temperature on the molecule structure of PTCDA by Raman spectra;2. ITO is the phtotdetecter' s anode, because it' s optics and electrical characteristics are sensitive to the rf. magnetron sputter' s process condition, so we discussed the relation between the character of ITO and technics parameter;3. formerly we use Al as the electrode on the ITO, but recently found Al can react with ITO, so we use Al-Ni electrode .compared the electeic characteristic using these two electrodes.