| Due to possessing excellent properties excelling silicon material, SiC material is becoming a research hotspot of new materials, microelectronic and photoelectron. This thesis focuses on growth mechanism of SiC homogeneity epitaxy and electrical characterization methods of epilayer. Chemical vapor deposition theory of homogeneity epitaxy SiC on single-crystal substrate is researched. By modeling for temperature and flow field with FEMLAB software, some improvements for epitaxial growth technics are presented. Electrical characterization methods of epilayer are also concluded and discussed.Firstly, three main preparation methods of SiC are proposed. Then the structure of epitaxy equipment and the functions of chief components are proposed, especially the hot-wall reaction structure. The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed. Finally, several measurements for improving epitaxial growth technics are also put forward.For understanding reaction condition, temperature and airstream distributions over the substrate are simulated with FEMLAB software. It is discussed that how temperature and airstream distributions vary when parameters are changed. When the length of graphite layer and substrate is different, temperature distribution of the substrate is analyzed. By changing the thickness of graphite layer, temperature distribution is also changed. In the airstream field, the influence of altering geometrical shape of susceptor on growth rate and quality of epilayer is studied. When temperature field and flow field interact, the temperature and flow field distributions in reaction cell are also research. Finally, characterization of single-crystal SiC polytypes using Raman scattering spectroscopy and characteristic methods for electrical performances are studied and discussed. |
