The Analysis And Design Of FBAR Duplexer

Thin film bulk acoustic resonator, or FBAR, is a new technology which has been used in the design and fabrication of microwave devices. These devices exhibit a combination of low loss, small size, frequency and bandwidth not attainable by any other type of device. Other advantages are moderate power handling capability, good temperature stability, and high dynamic range. Thin film bulk acoustic resonators show considerable promise as an integrable solution for RF band pass filters with center frequencies between 600MHz and 6GHz. 1D and 3D model of FBAR are constructed to analyze the effect of geometry structure and that of the property of material. 1D model is analyzed by ADS software. 3D model are analyzed by ANSYS software.This paper mainly focuses on the issues of the theory model of FBAR. The works is as follows:1. The basic theories used in FBAR are introduced. Derived from these theories, the coupling wave equation of sound wave and electromagnetic wave in FBAR is induced.2. The electrical property of FBAR and the BVD equivalent circuit model of FBAR considering the effect of geometry structure and that of the property of material are induced.3. 3D model of FBAR are constructed to analyze the effect of geometry structure. The simulated result is compared with the measured result. Fair agreement is obtained between the measured and simulated displacement profiles.4. 1D model of FBAR duplexer is constructed to obtain the relationship of the design guideline and the topology structure of FBAR.5. 3D model of FBAR duplexer are constructed to analyze the effect of geometry structure.