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Study On The High Performance X8R Dielectric Material Used By EMI

Posted on:2006-07-27Degree:MasterType:Thesis
Country:ChinaCandidate:H B ZhuFull Text:PDF
GTID:2178360182975208Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In this paper, the low frequency high dielectric constant X8R series dielectricmaterial for EMI and the powder for making were studied.Metal M were doped into BaTiO3 based material through the method ofmetal-dielectric composite. The inside interaction mechanics of the system werediscussed. The interaction of liquation metal M and dielectric can described bypercolation theory.In the experiment, through the discussion of composite technology,the choose offlux and the condition of sintering, gain a new type high performance intermediatetemperature range sintering X8R series dielectric material. the composite material canmeet the requirement of EMI filter capacitor. The results listed as follow (sintered at1150℃):ε≥5200ΔC/C≤±8% (-55℃~+150℃)tgδ≤1.5%ρv≥2×1011Ω·cmIn the experiment, on the base of experiments been done before, the way ofB-site substitution using precursor in BaTiO3-NiNb2O6-MnNb2O6 system was alsostudied. Doping glass flux into this system can lower down it's sintering temperatureto intermediate temperature range so it can use cheaper alloy such as 70%Ag-30%Pdas inner electrodes. The mechanics of precursor replacement of B-site ion was alsodiscussed. The results listed as follow (sintered at 1150℃):ε≥4200ΔC/C≤±15% (-55℃~+150℃)tgδ≤1.2%ρv≥1012Ω·cm...
Keywords/Search Tags:EMI, X8R, Metal-Dielectric Composition, Precursor
PDF Full Text Request
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