Font Size: a A A

The Research On Semiconductor Metal Oxides Nanomaterial For NO2 Gas Sensors

Posted on:2006-05-11Degree:MasterType:Thesis
Country:ChinaCandidate:X D XiaFull Text:PDF
GTID:2178360182970920Subject:Analytical Chemistry
Abstract/Summary:PDF Full Text Request
This dissertation focuses on the NO2 gas sensors fabricated using metal oxide semiconductive nanomaterials as sensing materials, mainly including four parts: Firstly, solid-state Taguchi-type NO2 gas sensors were fabricated with pure In2O3 and SiO2-doped crystalline In2O3 synthesized by sol-gel method. The sensing characteristics, such as response time, response linearity, sensitivity, working temperature, and working range were studied in detail. Sensors prepared with these sensing nanomaterials show good sensing characteristics to NO2 gas, and SiO2-doping improves sensitivity. Response and recovery are rapid. Secondly, Thin film NO2 sensors were fabricated using pure WO3 and SiO2-doped WO3 nanoparticles with various SiO2 contents (0-10%, wt%). WO3 nanoparticles were obtained by the means of thermal pyrolysis of white tungstic acid starting from Na2WO3 then followed with ultrasonic treatment, and SiO2 powder was synthesized via the sol-gel route. SiO2-doped WO3 nanoparticles were synthesized by solid-state reaction under the proper temperature. The NO2 responses were found to be very high and quite reversible, while the response and recovery times were fast and the reproducibility was satisfactory. The sensors show good long-term stability during 110 days. Thirdly, NO2 gas sensors were fabricated with pure WO3 powder obtained under different calcinating temperature from tungstic acid which in turn was prepared by passing an aqueous Na2WO4 solution through a cation exchange resin protonated in advance. Various types of WO3 powder show different sensing characteristics, such as the sensitivity and the best working temperature range. The experimental results show the possibility of improving the NO2 gas sensor's characteristics through controlling the synthesis parameters. Lastly, the metal oxide composites semiconductor NO2 sensing materials were prepared and examined, including SnO2-WO3, TiO2-WO3 and In2O3-WO3 by the use of solid-state doping reactions. The sensing characteristics of the WO3-based composites improved greatly compared with the former sensors. The environmental protection policies of most countries are oriented towards the regulation of measurement and control of toxic gases in the atmosphere. Nitrogen oxides (NOx: NO2 and NO) are typical toxic gases released from combustion facilities and automobiles. The on-site and real-time detection of hazardous gas calls for gas sensors with low energy consumption, fast response, and rapid recovery. The advent of nanostructured materials with enhanced properties paved the way to improve the gas detection. Thus, the fabrication of gas sensors using novel nanomaterials has recently been an active topic. This paper presents the results obtained with metal oxides gas sensors showing sensitivity to NO2 in the parts per million (ppm) range. These metal oxide semiconductor, Taguchi-type NO2 gas sensors prepared with the obtained nanomaterials as sensing materials show the fastest response and recovery time, good linearity, low resistance, low working temperature, high sensitivity, and good long-term stability.
Keywords/Search Tags:Metal Oxide, Semiconductive, Nanomaterial, NO2 Gas Sensor
PDF Full Text Request
Related items