The Gain Bandwidth Optimization Design And The Cross-Gain Modulation Of Vertical-Cavity Semiconductor Optical Amplifiers Based On The New Coupled Cavities

With the development of VCSEL technologies, vertical-cavity semiconductor optical amplifiers (VCSOA) have become to attract people's increasing interest. There have been some research results which indicate that VCSOA have the inherent advantages of high-fiber coupling efficiency, polarization insensitivity, and low noise figure, etc. Furthermore, they can be a low-cost alternative to in-plane SOA. So they have potential applied prospects in the domain of optical modulations, optical switches, optical detections, as well as wavelength conversion.Limited to the linewidth of the Fabry-Perot (FP) structure, the bandwidth of VCSOA is commonly narrow, In this paper we propose a VCSOA using a new coupled-cavity design to broaden the bandwidth. According to the similar method dealing with the DBR, the characteristic matrices of the layers in the active region are built up. Then multiplying the characteristic matrices of all the layers in the DBR and the active region orderly, the transfer matrix of the whole equipment are obtained. Combining the refractive index of substrate, the gain and bandwidth characteristics of the coupled cavities VCSOA is achieved in reflection mode. And we found that the gain bandwidth of two and three cavities VCSOA is increased by 170% as compared to the single cavity VCSOA.In this paper the wavelength conversion technology based on cross gain modulation of VCSOA (VCSOA-XGM) in reflection mode is simulated for the first time to extend coupled cavities model's application. First we use transfer matrix method to analyze the optic field distribution in VCSOA. Then according as the boundary condition and the continuous condition among the layers, the relation between the optic field distribution in VCSOA and the input signal outside (include pump light and signal light) is known. And the average photon density caused by pump light and signal light are obtained separately. By incorporating the carrier density rate equation into the analysis, VCSOA-XGM theory model is founded. The conversion bandwidth of 4nm is obtained in our simulation. The influence on the extinction ratio characteristic by the pump power and signal power is also discussed.