Study On The Preparation Method,the Properties Of The Anodic Aluminum Oxide (AAO) Template And The Properties Of Low Dimensional SiC Deposited On AAO Templates

Silicon Carbide (SiC) is one of the third generation of semiconductor materials following the progress of the first generation of element semiconductors (such as Si) and the second generation of compound semiconductors (such as GaAs,GaP and InP). SiC has a lot of outstanding physical and thermal properties, such as wide band gap, high breakdown field, high thermal conductivity and high saturation electron velocity.These properties make SiC a preferred semiconductor for the fabrication of devices in high temperature, high frequency, high voltage and high power conditions. But as we know, SiC is an indirect band gap material, which limits the applications on optic aspects.Our work is to solve these above problems. Due to the features of the anodic aluminum oxide (AAO) template, such as low cost, easy preparation and uniform tunnel arrays, we have used second anodic oxidation at low temperature and room temperature to fabricate through-pore and non-through-pore AAO templates. And We have fabricated low dimensional silicon carbide nanomaterials by sputtering amorphous silicon carbide on these AAO templates as substrates. The main works we have done are as below:1 , We have studied the basic properties of AAO such as structure, photoluminesence etc. And the properties of AAO connected with prepared condictions.2, The PL mechanisms have been detailed investigated. We have clearly distinguished the roles of surface and interior factors on the PL properties.3, We have fabricated low dimensional silicon carbide nanomaterials by sputtering amorphous silicon carbide on these through-pore and non-through-pore AAO templates as substrates. And We used AFM, SEM to character the properties of silicon carbide that we have prepared .