Reseach Of LED Chif With Patterned Substrate

This paper is mainly concerned with impact of Patterned substrates on the photoelectricty performance of GaN-based LED light-emitting diode. We make different surface patterns, diameters and periodicals during our experiments. Then, GaN-based LED epitaxial was grown using MOCVD equipments through lateral epitaxial growth method.(Including:n-GaN quantum wells and p-GaN). Through this approach, quantum well layer of different structures could be one-time grown successfully. Then ensuing processing of LED processing on Epitaxial slice.The photoluminescence (PL) spectrum of the epitaxial wafer of figurative substrate with different structures was measured.Different structures of quantum wells which caused by the size and structure of the different patterned substrate has got a kind of influence on LED characteristics of luminescence.Different structures on the same floor of the quantum wells will product two kinds of wavelengths of light.Furthermore,the electroluminescence (EL) spectrum of LED chip of pattterned substrate with different structures also was measured. And the influence of different patterned substrate on wavelength is discussed in this paper. Then we also have got approach on production process of LED chips on the basis of large amount of experiment. The key problems of the technology was solved and the LED chip with excellent performance was fabricated.