Numerical Simulation Of The Interference Of Electromagnetic Radiation On Microstrip Transmission Line

With the high-speed development of electronic technology, the electromagnetic environment is becoming increasingly complicated due to the broad application of electronic equipments. The study on radiation of electronic equipments and the performance of them in complicated environment is a very important branch in electromagnetic compatibility (EMC) research field. The electromagnetic interference on microstrip transmission line (MSTL) is investigated in this paper from the point of view of field.FDTD (Finite-Difference Time-Domain Method) method is used to the study the interference of electromagnetic waves on MSTL. The induced current and voltage at the MSTL ports are calculated, and the response characteristics of the ports are obtained under different electromagnetic radiation conditions.In the simulation, skills of modeling, ports setting up and the feed setting are discussed in details firstly.Then the interference on MSTL by sinusoid electromagnetic wave and gauss pulse are simulated. Characteristics of induced voltage and current at ports of MSTL in both time and frequency domains are obtained when electromagnetic waves incident at different angles.When the incident wave is sinusoid, the current induced at two ports of MSTL goes up with the increase of incident angle. The magnitude of current reaches maximum when the incident angle is max (namely, the incident wave is parallel to the strip of MSTL).When the incident wave is Gauss pulse, the response characteristics at ports both time and frequency domain varies with incident angles. Moreover, the interference on MSTL becomes strongest when the Gauss pulse incidents in the direction vertical to the strip.The voltage and current ports attain maximum response at several frequency points when the termination is shorted or opening. The resonance phenomenon appears and MSTL corresponds to resonance device. There is a good agreement between the simulation results and theory analysis.In addition, the response relation of ports' voltage and current are compared between the MSTL with two adjacent strips and corresponding MSTL with wide strips.PN-junction is the basic element of electron system and the interference of electromagnetic radiation will affect on PN junction finally. Simulation of PN junction diode lays the foundation for the simulations of other semiconductor elements. Device simulation provides the devisers the deeper information about the device. In this paper, programming with Fortran language and solving semiconductor equations by the decoupled algorithm advanced by GUMMEL, PN junction diode is simulated and the distributions of several important physical parameters are obtained.