Analysis And Research Of Measuring Minority-Carrier Lifetime In Diode And Silicon Material Of Bonding

Minority-Carrier Lifetime is an important parameter to semiconductor materials and devices. It reflects the quality of materials and performance of devices, so it is necessary to get this parameter accurately.This paper researches many methods of measuring minority-Carrier Lifetime in pn junction and pin diode, obtains a more accurate expression by analyzing charge-control equation and calculates expression of stored charge in this method. This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination. The simulation analysis of Medici has proved these expressions. The calculation software is programmed in Matlab, which can analyze the measuring results. This paper also researches the surface photo voltage method which is used to measure silicon wafer.