Study On The Doped-semiconductors And Quantum Well Materials Irradiated By The Free-electron Lasers

In recent years, the studies on the free-electron lasers(FELs) and thequantum well systems have became popular worldwide. It's supposed thatthere should be some interesting phenomena to irradiate the quantumwell materials by the FELs. In this paper, we will present some works relatedto this field. In section 2 and section 3, we will first introduce the FELs, thedoped-semiconductors and the quantum well materials. In the part for theFELs, we emphasize on the theory and the special features of the FELs. At lastwe also mention about the Beijing free-electron lasers equipment (BFEL). Theintroduction to the doped-semiconductors is mainly about the fundamentaltheories of the impurity energy levels. For the part of the quantum wellmaterials, we introduce the definition and the classifying of the quantum wellsystems. We also briefly introduce the quantum well infrared detectingtechnology. In section 4 and section 5, we will present the detailed workswe've done. Including the calculation of the binding energies of hydrogen-likeimpurities in a semiconductor in intense laser fields and the examinations ofthe quantum well infrared detectors using BFEL. It is found that E1s, E2s andE2s- E1s decrease with an increasing radiation intensity or with decreasingradiation frequency, which implies that an intense THz fields can enhanceionization of dopants in semiconductors. And we demonstrate that usingmid-infrared FELs as intense laser radiation sources, AlGaAs/GaAs-based quantum-well infrared detectors can be examined successfully and it will work even at room-temperature for high mobility device.