Station Model And Anti-noise Properties Of Micro-cavity Semiconductor Laser

For micro-cavity semiconductor laser, station model is proposed in this paper and its steady-state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. For current noise, sp noise, noise, p noise, as wellas current modulation, sp modulation, modulation and p modulation, usingsmall-signal approximation, we derive the laser's corresponding transfer functions. And we calculate their signal-to-noise ratio (SNR) gain in various parameters through frequency domain analysis in the premiss of large input SNR. The results of numerical simulation show that for various kinds of noise without modulation the anti-noise properties and the output quality of laser can be improved by selecting appropriately bias current and parameters of the cavity. For phonetic signal modulation, if the pass band range of the band pass filter(BPF) is 300Hz - 3400Hz , the anti-noise properties of laser are approximately independent of bias current and parameters of the cavity; when the pass band range of BPF increases to a certain degree, modulating bias current and parameters of the cavity can improve the anti-noise properties of laser.