Study On Luminescence Characteristics Of Nc-Si/SiO₂ Structure With Sol-Gei Method

The study of Si-based materials light emitting is a new leading field in semiconductor optoelectronics and photonics. The light emitting if Si-based quantum-dot is attractive research direction. In this thesis, we demonstrate the study of Si-based light emitting materials and its importance in Si-based photonics integration. We discussed mainly the gain, differential gain, threshold current of Si-based quantum-dot laser and the dependence of threshold current on temperature from discrete energy level of three-dimension confined quantum-dot and state density distribution of 5-function.Based on these analyses, we see that the Si-based quantum-dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when Si-based quantum-dot laser compares with normal semiconductor laser and quantum-well laser. We describe also some methods of fabricating Si-based quantum-dot. We introduce the Sol-gel method for the fabrication of n-Si/SiO2 film and give the SEM(scan-electronics microscope) of n-Si/SiO2 and energy spectra of n-Si/SiO2. These works are the base for the study of Si-based quantum-dot light emitting.