Study On Semiconductor Optical Amplifier And Measurment

For long-haul high bit rate trunk line optical fiber communication system and metro optical fiber network, a semiconductor optical amplifier (SOA) is the most promising component due to its all kinds of properties and small dimension, compactiveness, low drive voltage, such as in optical network solutions, polarization-insensitive semiconductor optical amplifier (PISOA) is a popular candidate as optical gates. But the polarization-insensitivity over large wavelength range is requested. The purpose of this thesis is to develop a SOA which is polarization-insensitive and has large 3dB bandwidth.A novel polarization-insensitive semiconductor optical amplifier (PISOA) with graded strain bulk-like active structure has been designed and fabricated. We have analyzed their polarization insensitivity characteristics from the point of theory. Such active structure is an ideal selection because it can overcome both the narrow-stripe width limitation due to tensile strain layer introduction and the critical height limitation due to thinner tensile strain layer and distribution separately.In order to measure the characteristics of such semiconductor optical amplifier, we adopted a set of measurement system. This measurement system can be used to measure the characteristics of all kinds of active or inactive optical passive components.Such device presents good polarization insensitivity (<0.9dB), wide 3dB bandwidth(>33nm) at 0-200mA and different input signal light wavelength and power, the maximum fiber-to-fiber gain of 10dB, lossless operation current of 50-75mA for different input signal light wavelength and power, large extinction ratio (>50dB) and lower noise figure (NF) (<8dB)...