The Study On The New Rapid Evaluation Method Of Microelectronic Devices

A systematical and intensively study of Schottky barrier and the whole device of GaAs MESFET has been presented in this paper. To the weaknesses of conventional method , the author put forward the Temperature Ramp Measurement (TRM) .This method can observe whole process of change dynamically and extract the lifetime and failure rate To the multiple failure mechanism in the degradation process , we define the concept of the weight and give a reasonable explaination of the result by this concept . Through the experiment , we have already find a new method of rapid evaluation of the microelectronics devices...