The preparation study of boron nitride(BN) thin films especially cubic boron nitride(c-BN) thin films are attractive to the materials field for recent years because of its excellent properties such as high tempreature stability, high chemical stability, large thermal conductivity and well lubrication..In this paper, BN thin films on 40Cr and T10 are prepared by radio frequency magnetron sputtering method. The influence of different spurting parameters and interlayers on the configration and characteristic of the films, is studied by X-ray diffraction test, FTIR spectroscopic analysis, friction and wear test and scratching test.With increasing tempreature, BN films was gradually crystaled and c-BN could be received by SEM. Uniform and compact films could be prepared at pressure of 0.8Pa and negative voltage of 150V. Films prepared at power of 300W and time of 3 hours is excellent. X-ray and FTIR showed that cubic boron nitride was increased by increasing temperature, and it is favorable for the growth of the films at ratio of N2/Ar=15/60 and pressure of 0.8Pa, and cubic boron nitride cannot be achieved below 120V.Scratching test showed that the cohesion of the films was higher at 300W,3h and 0.8Pa. The films cohesion was improved through the methods of increasing Ni-P and TiN interface and tempering the substrate.Friction and wear test showed that the friction coefficient of BN films was much lowwer than that of the sbustrate,making the effort of decreasing friction. |