Study On Temperature Regularity And Damage Effect Of Thin-film Component Irradiated By Laser

In accordance with the mentioned background of study contents, incident side of fabricate prism of optical system in a typical opt-electronic was used in experiment and theoretical studies, used different wavelength and different work mode to irradiate TiO₂/SiO₂/K₉ films and acquired temperature rule and damage effect. Temperature field of the TiO₂/SiO₂/K₉ films was calculated with thermal analysis module of ANSYS program. Measured temperature by infrared thermal apparatus and adjusted amount module result, parameter K was obtained. Temperature rule, damage effect and thermal stress were gained. The initiative aspects of this study are as follow.1. Damaged TiO₂/SiO₂/K₉ Films CharacteristicBased on calculation of temperature field which was caused because laser irradiated TiO₂/SiO₂/K₉ films, account for temperature field theory by laser irradiated multiple films. the first, laser damages the best high temperature films. Due to electricity field isn't the highest in the outer films, the films which laser damaged didn't certainly take place on the surface of the films. And so electricity field of the multiple films have an important effect to damage effect of the films.2. Ascertain Damaged Films Time and Failure TemperatureCarried out failure threshold temperature and damage effect, and found effectual method of damage films in the experiment:(1)Through the spot measure and the signal analysis of the reflected active laser beams from films surface, damage films time was ascertained in the course of laser irradiating films.(2)Through analysis of the temperature anomalous transformation which was measured by infrared thermal apparatus, and temperature descend abruptly in different time damage intensity, damage time and failure temperature.3. Temperature of laser irradiated filmsIn accordance with multiple films' character, physical model of temperature field CW-laser irradiated multiple films to beget was established.In order to decreasing calculation time, using ANSYS thermal analysis program, mesh was demarcated very small, substrate was demarcated largely. In case of material physical parameters were changed, lessening model to establish calculation model of temperature field CW-laser irradiated different films elementto beget.Using experimental data of temperature laser irradiated films to beget to adjust result of numerical model, synthetic count K-1.2 and ï¿¡=1.23 of 1.06jj.m CW-laser irradiated films with reflecting side and without reflecting side were ascertained. 1.315um CW-laser irradiated films without reflecting side to obtain K=0. 8, and so rule of temperature field laser irradiated films were acquired. 4. Temperature and thermal stress of pulse laser irradiating filmssynthetic count K=\. 2 which 1. 06jum CW- laser irradiated films with reflecting side to acquire, temperature effect that pulse laser irradiated films with reflecting side was calculated.Results prove that the largest electricity field isn' t on the surface of films, but the largest is the 42th films, when pulse laser irradiated, damage begin from 42th films at first.In accordance with temperature which CW-laser irradiated films to acquired, thermal stress was calculated because of temperature. Results prove short time, little thermal diffusion, thermal effect was high in laser beam field, but was small out, thermal stress is pressure on the thickness ,diameter and circle in the laser beam field, but thermal stress changes pull out laser beam field.In summary, the comprehensive studies of laser - induced failure and damage effect on films element, method of combine theory calculation with experiment, failure threshold and damage time were acquired in different laser power, temperature rule was obtained. Research result was applied in a typical opt-electrical system, especially damage threshold of the films provides important reference to avoid laser to irradiate opt-electricity system. In the course of studies method and technology route will provide reference value to relevance programmer in the future.