Study On Preparation Of Window Material And Absorb Material In Solar Cells

SnS is a no toxicity and pollution semiconductor material. Its spectral mapping is close to the solar radiation. It is an important material which can be used in the solar cell as absorption layer. ZnO is a nontoxicity and abundant semiconductor material which has a band gap of 3.3eV. It has a high chemical stability and high thermal stability. It is a new window material for solar cells which is value to research.Thin film of SnS was prepared with the chemical bath deposition method and the successive ionic layer adsorption and reaction method (SILAR) on ITO and glass. Meanwhile, the influence of different reaction situation on SnS films was studied. The reaction mechanism of SILAR and chemical bath deposition was studied.XRD and SEM were employed to study the crystalline structure and the surface morphology of SnS thin films. The results of characterization indicate that the SnS films prepared with the chemical bath deposition method are better than films prepared with the SILAR method. In the process of prepared SnS thin films by the SILAR method, we got the optimized condition in preparation of SnS thin films by the SILAR method.In preparation of ZnO thin films by SILAR method we use different reaction resource. Through XRD and SEM study we got the optimized condition in preparationof ZnO films by the SILAR method. We analyse the influence on electrics properties of ZnO films by doped and the temperature of annealing.