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The Effect Of Laser Irradiation On Silicon Solar Cell

Posted on:2004-10-24Degree:MasterType:Thesis
Country:ChinaCandidate:Y X ZhuFull Text:PDF
GTID:2132360152957136Subject:Optical Engineering
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The paper is mainly on the study of the effect and the destruction threshold of single silicon solar cell irradiated by 3.8 μ m laser. And we also have studied the effect of the solar cell array-accumulator electrical system of man-made satellite when irradiated by the laser with the power density 2.7W/cm2.Considering that we cannot make sure the exact value of the absorption coefficient at which the glue layer absorb the 3.8 μ m laser, we take into account two extreme cases and build two models correspondingly. We calculate the temperature rising of the p-n junction of solar cell when irradiated by the laser in the laboratory conditions, finding that the factor that influences the temperature rising mostly is not the position where the laser energy changes into heat, but the thermal coefficient. It is found that the thermal coefficient is proportional to the maximal temperature rising. An experiment has been carried out in which a solar cell was irradiated by 3.8 μ m laser and the voltage of the load and the temperature of the back were recorded. From the experiment we summarize that silicon solar cell has no optical response for the 3.8 μ m laser, and the destruction threshold is about 104W/cm2. It is also found that with the power of level of 102 W/cm2, the laser irradiation can make the solar cell produce no output, but cannot destroy it; we haven't found that the face electrode was flaked off. We've made effort to find the thermal coefficient by repeated trying it and comparison the calculated result and the recorded results of the experiment, finding it is about 0.1.The effect is calculated under the condition that the solar cell array-accumulator electrical system is irradiated by the laser with a power density of 2.7W/cm2, the maximal effect of which is that the maximal temperature rising of solar cells of the array is about 22K,the open-curve voltage and the output power of the array decrease both about 10 percent. The calculated result is proportional to the thermal coupling coefficient, irradiating time and cosβ, in which β is the angle between the laser direction and the normal direction of the array. Considered with the working and managing principles of the electrical system, it is believed that the electrical system can continue to provide energy to the loads of satellite if the time of laser irradiating is not too long (t<10 second), and that there is almost no probability that the electrical system suffers fatal effect when irradiated by the laser.
Keywords/Search Tags:3.8 μ m laser, silicon solar cell, destruction threshold, effect of laser irradiating
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