The Research On Production Process And Performance Of SiGe Film By Magnetron Sputtering

With the development of photonics technology and the thin film technology, silicon germanium films get more attention by researchers. Silicon germanium films apply in optoelectronic integration, microelectronics and thin film solar cells, silicon-germanium thin films have been entered to people's daily life. Polycrystalline SiGe films have simple preparation, low cost, large-scale production and they are easy to control. This paper uses a common DC sputtering and RF sputtering sputter the SiGe film to obtain excellent quality and uniform films, mainly in the following areas:First, Described the excellent character of SiGe film and the main method- magnetron sputtering mothered at present, respectively, sputtering Si, Ge by magnetron sputtering, obtained the optimal parameters of sputtering Si, Ge. On this basis, the co-sputtered SiGe multi-layer composite film.Second, Effect of sputtering parameters during film sputtering process on quality and crystallization were researched. The results showed that when the substrate temperature is 500~600℃, the thin film quality is the best, cystalinity increases, the grain is also growing, and the performance of support good growth characteristics preferred; pressure become too low and too high, which were not conducive to optimizing the film growth. When the intensity of pressure is 2.5Pa, the sputtering speed is suitable, the sputtering thin film's quality and the compactness are best; a certain bias can reduce the substrate temperature and achieve polycrystalline thin film growth at low-temperature. When the bias is 20V, the substrate temperature can be reduced to 300℃, the grain boundary was obtained as polycrystalline thin films.Third, The influence of annealing temperature and time on quality and crystallinity of thin films were researched. We found that When annealed at 700℃, the uniformity of film quality and density are the best; with the annealing time increases, the grain increases, the roughness increases, SiGe film layer uniformity even becomes worse.Finally, By changing the sputtering growth cycle SiGe films, the study found that the illumination is mainly by a-Si, Si nano and Ge nano grain caused between defects. When the sputtering cycle is 25, the crystal boundary surface is clearest, the quality is most superior.