Preparation And Properties Of AZO Transparent Conductive Thin Films

The Traditional transparent conductive oxide thin film material is Sn-doped In203(ITO), but the metal indium is rare resource and toxicity, so the research and development of a new transparent conducting films which could replace the ITO films have attracted considerable attention. The Al-doped ZnO(AZO) as for its good conductivity, high tansmittance in the visible light region, rich source proves to be the appropriate placer for ITO. However, there are still mang problems and difficulties in its applications. For example, compared with Sn-doped In2O3 film, AZO film has disadvantages of low conductivity. Furthermore, the uncertain relationship between photoelectric property and microstructure still call for deep researches. So, some researhes about high quality AZO films, including preparation parameters and Al doping concentration were carried out. Firstly, used w(Al2O3) content were 2% of (Al2O3+ZnO) creamic target as target, researched the effect of sputtering conditions on growth and properties of AZO films prepared on ordinary white glass substrate by direct current magnetron sputtring. Secondly, Researched the crystal structure and photoelectric properties of AZO film deposited at various Al doping concentration. Finally, we studied the influence of sputtering pressure, target current on structure and photoelectric properties of AZO film.(1) AZO films were prepared by direct current magnetron sputtering, the effects of substrate rotation speed and target-substrate distance on structure and optoelectric properties of AZO films have been disscussed. The results indicated that high optoelectric properties of AZO films with high deposition rate and low deposition temperature have been achieve. The researches lay a solid foundation for the applications of AZO films, the AZO films shows low resistivity of 8.29×10-4Ω·cm and high transmittance of 89.04% when prepared at substrate rotation speed of 0 rpm, target-substrate distance of 3cm.(2) The infulence of Al doping concentration on structure and optoelectric properties of AZO films have been disscussed. The results showed that high Al doping concentration decreased AZO film crystalline quality which affects the resistivity of the AZO films; the AZO films shows low resistivity of 4.68×10-4Ω·cm and high transmittance of 89.4% when prepared at Al dopling concentrotion of 1%.(3) Studied the influence of sputtering pressure, target current on structure and photoelectric properties of AZO film. The results indicated that high sputtering current and sputtering pressure will lead to optoelectronic properties of the film drops; the AZO films showed low resistivity of 4×10-4Ω·cm and high transmittance of 89.51% when prepared at sputtering pressure of 0.15 Pa, target current of 2A.