Responsibility Of Optlcal Fleld In Nano-Stractured Materials

Novel Photoelectronic Materials, including its design, performance,preparation and processing of new ideas, new discoveries, new methods,new technologies, has long been hot in the materials research field.Information with new properties and development of photoelectronicmaterials technology for the electronics industry, economic developmentand enhance overall national strength has important strategic significance.Study on nano-materials is one of the important developments innano-science and technology. Nano-material is solid material which iscomposed by extremely small grains and its feature dimension size isnano-meter scale(1-100nm). Compared with micron crystal materials,there are many strange performance in catalytic, optics, magnetic, andmechanics due to these small grains, huge amounts of center-atoms incrystal boundary and crystal grains and its quantum size effect, small sizeeffect, surface effect, and macroscopic quantum tunneling effect. Nanomaterialshave been focused in the field of materials science andcondensed matter physics.Two kinds of Photoelectronic nano-materials are studied in thispaper. One is the multilayer structure. Metal-semiconductor structure (MSstructure) is one of the typical multilayer structure. This material presents lateral photovoltage effect (LPE) and waveguide effect under theirradiation of typical laser. The other is the embedded-metal structure.This kind of structure focus the light field energy into the specific location.A novel position-sensitive detector (PSD) based on themetal–oxide–semiconductor (MOS) structure, which is simply fabricatedby an n-type Si substrate, a thin native SiO2 layer and an Au film, isreported in this work. This detector shows a large lateral photovoltage(LPV) with high sensitivity and good linearity. Furthermore, the LPV ofthis structure greatly depends on the incident angle of the light,suggesting some extra potential for the development of new types ofwaveguide-like devices.An approach has been introduced called time reversal to conherentlycontrol the position in which the optical energy localizes in plasmananosystems. This approach is based on the impulsive localized excitationof the nanosystem and time reversal of the generated far-zone field at asingle point with one polarization. Despite strong interaction andsignificant dephasing and dissipation in metal plasma systems, andincompleteness of this time reversal, the proposed approach proves to bevery efficient in controlling the nanoscale optical fields. The approachmay be applied in nanoscaless spectroscopy, optical modification,ultradensememory, and information processing on the nanoscale.