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Theoretical Studies On The Conducting Macromolecule With σ-π Conjugated System

Posted on:2010-10-18Degree:MasterType:Thesis
Country:ChinaCandidate:D ChenFull Text:PDF
GTID:2121360278466614Subject:Applied Chemistry
Abstract/Summary:PDF Full Text Request
Since MacDiarmid, Heeger and Shirakawa discovered that the doped polyethyne has high conductivity, the organic conducting polymer materials have been regarded by material scientists, chemists and physical scientists all along, because of light, unique properties on optical, superconduction and so on and the potential application prospects of molecular apparatus, composite materials and other fields. It becomes the forefront topic in materials science field. There are many theory studies onπ-conjugated conducting polymer at present, but few other literatures have been reported on the charge-dopedσ-πconjugated conducting polymer especially the doped PSi and its ramification. So a systematical study on a series ofσ-πconjugated conducting polymer is needed. We wish this work would provide a guiding principle toward a molecular design of novel Si-based functional materials.The geometric and the electronic structures of organosilicon oligomers nSixL(C=C)y, nSixR(C=C)y, and R-nSix(C=C)y are studied using the density functional theory. It is found that the extension of theπ-conjugation plays an important role in tuning the geometric and electronic structures. The band gap tends to be decreased and the hole injection rate and hole transfer rate tend to be increased with the enlongation of theπ-conjugated units. There exists an effectiveσ-πconjugation between the silanylene moiety and the ethenylene moiety, which is significantly operative for the polymers with a rather smallπ-electron moiety. There exists an even/odd effect of the silanylene number x on the band gap. Charge-doping could remarkably lower the excitation energies. The interchain hole hoppings mainly occur between theπ-conjugated units. A doped nSixL(C=C)y+, nSixR(C=C)y+, or R-nSix(C=C)y+ (x≥2) oligomer could convert from a unrearrangement conformation to a rearrangement one except nSi4R(C=C)y+. The simulated UV/vis absorption peak of the rearrangement structure locates at higher energy region related to the unrearrangement one. The hole transfer rate is significantly decreased if a doped unrearrangement molecule changes to a rearrangement one. These results are in good agreement with the experimental observations.
Keywords/Search Tags:organosilicon oligomers, theoretical calculation, charge-doping, conduction
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