The Preparation Of Si Doped ZnO Thin Films And Nano-crystals Si Embedded In Al₂O₃ Films By Magnetron Sputtering

As an important micro-electronic thin film material,Si has get successful applications in ultra-large-scale integrated circuits(VLSI),solar cells,liquid crystal display,memory storage, and special semiconductor devices.In recent years,with the rise of various types of nano-thin film materials and quantum devices,the preparation and studies on electrical properties of the structure with nano-grain polycrystalline Si thin films have attracted wide attentions.ZnO is one of the II-VI group direct wide band gap semiconductors.It has become an important material for the next-generation UV light-emitting diodes and laser diodes due to its large exciton binding energy.Integrating the photoelectric properties of ZnO and Si has a utmost importance in the photoelectric field.At present,most of research in this area concentrated in the growth of the ZnO thin films and devices on Si substrates and the studies on nano-structures.However,the light-emitting efficiency of nanoparticles are considered more higher than the films and one-dimensional nano-materials.In this paper,the radio frequency magnetron sputtering was firstly used to prepare Si doped ZnO thin films,then the samples were annealed in different temperature.X-ray diffraction(XRD),resonance Raman and photoluminescence(PL) were used to study the structure and luminescent properties.The study showed that the ZnO nano-particles generated in the Si doped ZnO thin films.The crystalline of ZnO nano-particles get better,and its radius gradually increased as the annealing temperature increased.The emission of visible area gradually increased as the annealing temperature increased,which has an important significance in the preparation of ZnO based white LED.The results of temperature dependent photoluminescence show that the impurity Si in Si doped ZnO thin film strengthen the energy of the bound exciton,which lead to increase the intensity of ultraviolet emission.In this paper,the DC magnetron sputtering was also used to prepare the nano-crystals Si embedded in Al,then the samples were annealed at different temperature and obtained the nano-crystals Si embedded in Al₂O₃.XRD and PL were used to study the structure and luminescent properties.The results show that the existence of Si nano-crystals in Al₂O₃ thin films and its radius decreased with the annealing temperature increased.The strong visible photoluminescence at 2.07-3.02eV were observed at room temperature.The intensity of visible luminescence varied with the annealing temperature changed.The results of analysis showed that the visible luminescence associated with the nano-crystals Si and the defects at the interface of Al₂O₃ and nano-crystals Si.