| ZnO is aⅡ-Ⅵsemiconductor material with wide direct band-gap and has a hexagonal wurtzite structure,ZAO is a material of Al-doped ZnO. ZAO films have many advantages of excellent electrical and optical properties,cheap and abundant raw materials,nontoxicity,high thermal chemicas and thermal tability stability.Therefore,the preparation of ZAO films become the focus in the field which in the electrical and optical films studies in recent years.In this paper,ZAO films were preparated at 80℃low.temperature and vacuum annealing the as-deposited films.X-ray dfffraction(XRD), scanning electron microscope(SEM),four-point probe and other equipments for characterize and analysis of the films.The purpose of the experiment-is to explore ZAO films' preparation technology by direct current(DC) magnetron sputtering reactive magnetron sputtering method.The experimental result indicated that,for preparing highly oriented along c-axis,electrical and optical properties ZAO films.The optimized growing and vacuum annealing parameters are:The target-substrate(TSD) is 6cm,the deposition time is 30min,O2 flow rate is12%,sputtering power is 60W,vacuum annealing temperature is 500℃,vacuum annealing time is 1.5 hours.At the optimized growing parameters:ZAO films' optimal transmissivity reaches 90%at 380nm wavelength and the lowest electrical resistivity is 2.52 x 10-3Ω·cm;at the optimized vacuum annealing parameters: ZAO films' optimal transmissivity reaches 92%at 380nm wavelength and the lowest electrical resistivity is 5.63 x 10-3Ω·cm. |
