| Transparent conductive thin films show various excellent optical and electrical properties and abroad applied background as a new kind of photoelectrical materials. At present, ITO transparent conductive thin films are widely used in many aspects because of many advantages. Because of lack in metal source Indium and some traditional shortcomings of ITO transparent conductive thin films, the properties of them are being improved and more potential transparent conductive materials are researching. Transparent conductive composite thin films AZO/Ag/AZO and nano ITO powders were researched in this paper. Transparent conductive composite thin films AZO/Ag/AZO with good optical and electrical properties were prepared on glass substrate at room temperature by radio frequency magnetic sputtering using a ceramic target with mass ratio of ZnO2 to Al2O3 97:3, and nano ITO powders with mass ratio of In2O3 to SnO2 50:50 were prepared by a chemical co-precipitation process. The influence of O2 flow rate on transmittance,square resistivity and surface appearance were discussed and the reasons were studied deeply. Moreover, the influences of PH values, aging times and sintering temperatures on crystalline degree of ITO powders were discussed too. The main concerned results and conclusions are as follow:In the preparing process of transparent conductive composite thin films AZO/Ag/AZO, the thicknesses of thin films were influenced by O2 flow rate, and the deposition rate was fastest when O2 flow rate was 4sccm. The transmittances of thin films with Ag thin films getting thicker were not reduced when O2 was introduced to AZO thin films deposition, and the square resistivities were declined at the same time. The transmittance of composite thin films which consisted of AZO films of 59nm thickness when O2 flow rate was 4sccm and Ag thin film of 33nm thickness when O2 flow rate was 0sccm was about 88% in visible light range and square resistivity was about 2.5Ω/□。In the chemical co-precipitation process of nano ITO powders, crystalline structure was not exist when reaction temperature was at 40℃.Crystals under PH values of reactive solution above or equal to 7(PH≥7) were better than them which were prepared under PH values of reactive solution below 7(PH<7) when aging time was 24h at 40℃. It was obvious that prolonging aging times was in favor of crystalling process. When reaction temperature was at 70℃, crystalline degree under PH<7 was weak because the deposition was not entire. Crystalline degree under PH=7 was the best and crystalline degree under PH>7 was the worst at 70℃. The reasons were that raising reaction temperature could move on reaction balance, concentration of In(NH3)4+ ascended and the natural combination of In3+ and OH- was influenced, then the growth of precursor was influenced at last. It was obvious that raising reaction temperature was in favor of crystalling process too. Diffraction peak of ITO powders of which aging time was 24h was sharper than that of which aging time was 48h under PH>7 at 40℃. Because that the deposition speed was more than the dissolution speed when aging time was less than 24h, crystals gradually grown up. The deposition speed was equal to the dissolution speed when aging time was 24h. Crystals were continued to growing up when prolonging aging time to 48h and full width of half maximums becomed wider. The quantity of Zn which joined into the crystalline lattices of In2O3 was the most when aging time was 24h. Moreover, diffraction peaks of crystals moved to right gradually with increasing sinter temperatures. |
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