The Control Study Of Profiles Of Photoresist Grating Masks

The exposure and development of grating masks profile made of Shipley have been discussed in this paper. Models of exposure and development have been established to simulate and analyze the final profile of the grating masks, which were compared with experiments results. The models have proved to be correct with the consistency between the simulation and experiments. Main research results are as follows:1. Characteristics and curve data of the Shipleys have been studied and orginated by step experiments . Modeling of the profiles according to the data has been established and compared with experiments results, which have proved to be consistent.2. In order to effectively control the profiles of the grating masks, interaction relationships of the corresponding profiles of grating masks of various categories of Shipleys particularly width ratio variations to the exposure volume, concentration, temperature and development duration of the developer have been simulated, analyzed and compared with experiments. Results of simulation and experiments have proved to be consistent. On the basis of above-stated, interaction rules of the profiles (mainly the width ratios) under different exposure and development conditions have been concluded, through which control methods for profiles have been investigated and achieved, thus guidelines for fabrication of grating masks for qualified profiles have been generated both in theory and in method.3. Under the condition of applying 413.1nm ray for holographic exposure to Shipley, when varying space frequencyof gratings and comparing profile simulation with experiment results, it was detected that sensitive efficiency of shipleys under holographical exposure was only 80% of that under single ray when spacial frequency increased to 10001/mm ~ 20001/mm. On such basis, exposure modeling has been verified and interaction rules between spacial frequency and shipleys (mainly width ratio) has been originated.4. Profile ariation rules and comparison of sensitive of Shipley to two different spectrum under same exposure volumes have been studied and simulated by using 413.1 nm and 441.6 nm laser .