| As a wide band-gap semiconductor, silicon carbide has attracted much attention because of its super physical properties, such as high thermal conductivity, high electron saturation velocity, high break-over voltage etc. Accordingly, it is considered as a potential candidate in high-temperature and high-power electronic devices applications.In this paper, polycrystalline 3C-SiC films have been formed on silicon substrates by carbon ion implantation. In addition to the photoluminescence behaviors of thin 3C-SiC films, the influence of carbon ion dose, carbon ion energy and heat treatment condition on the formation of SiC films has been investigated. The photoluminescence behaviors of Er3+ in SiC and ZnO substrates have been analyzed.The results show that a new type of SiC type-Si5C3 was formed on silicon substrates when the carbon ions were implanted a low dose (1×1017 ions/cm2). The existence of Si5C3 was confirmed by XRD and XPS. The FTIR and Micro-Raman results show that the vibration frequency of Si-C band in Si5C3 is lower than that in 3C-SiC crystal. When carbon ion dose increases to 6×1017 ions/cm2, 3C-SiC thin films were formed on silicon substrates. AES, SEM, XPS, GXRD and Micro-Raman and TEM were used to characterize the thin films. PL and UV absorption spectra show that the emission lines center at UV region.Fluorescent photometer was used to characterize the PL spectra of Er3+ in SiC and ZnO substrates at 355 nm (corresponding to the 2G7/2 energy level of Er3+), 378 nm (corresponding to the 4G11/2 energy level of Er3+),488 nm (corresponding to the 4F7/2 energy level of Er3+), 519 nm (corresponding to the 2H11/2 energy level of Er3+). With increase of the carbon ion dose, the emission peak intensity of Er3+ increases to a top value (C+: 6×1017 ions/cm2, Er3+: 2×1015 ions/cm2) and then decreases. In ZnO substrates the emissions of 4G9/2→4I15/2, 4F5/2→4I15/2 of Er3+ and exciton emission ZnO were observed.
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