The Preparation Of TiO_2-xN_x Film And Its Micro-Structure And Property Analysis

This thesis took Ti with purity of 99.99% for target material, glass for substrates, Ar for sputtering gas, the mixture of N₂ and O₂ for reacting gas. It prepared TiO_2-xN_x film at different parameter by DC magnetron sputtering and make the film further crystallization by substrate heating and annealing. Systematically, it analyzed the influence of different technological parameter to crystal structure, elements and properties of the film by using XRD, TEM, XPS, ultraviolet-visible absorption spectrum and photocatalysis reaction. Experiment results shows:The TiO_2-xN_x film is amorphous when it is prepared at room temperature by DC-magnetron sputtering. After annealing treatment, the film is the structure of TiN. When we heat the substrate in sputtering, the growth of crystal is sufficient, the crystallization degree is enhanced, the size of crystal gets big and growing with columnar crystal as the rise of substrate temperature. The element N has appeared in the film. After the content of element N increases first with the rise of temperature, it is little to reduce. The major crystal structure in film also from Anatase to Rutile. Along with the rise of substrate temperature, TiO_2-xN_x in film appearance also has since having no go to complete disappearance again. It is influence the combination form and combination way that different N/O in process. So in film, the adulteration quantity and the adulteration form of N element are different. that from no to film's crystallization degree is enhanced, and it is changed from single crystal to multi crystal.The absorption summit of the film that prepared in different substrate temperature and gas density is obvious difference which we can see from its ultraviolet-visible absorption spectrum. The adulteration of N element may make the photocatalysis of the film get raising from photochemical catalysis performance.