| With the integrated circuit(IC)manufacturing further refining(It is estimated that line-width 32 nm and diameter 450 times in 2010),the chip surface roughness should be down to sub-nanometer scale(＜1 nm).On the other hand,to develop the storage density of magnetic disks,the surface roughness of the magnetic disk and magnetic head should be improved step by step(Ra≤0.1 nm).Global planarization is becoming one of the most necessary challenges in present electronic industry.The global planarization ability of chemical mechanical polishing(CMP)has led to that it has been selected as the only effective machining technique.It has greatly developed in the wide applications,and the study on CMP mechanism is becoming a hot-spot.This paper is mainly engaged in the research of material removal mechanism of CMP and discussed a typical mechanical contacts model in the CMP process,namely, the model of fluid dynamics.Based on classic collision theory,fluid dynamics theory and tribology theory,the abrasion mechanism in the dynamics model is investigated in detail including the movement trail,the contact station and the contribution to the material removal rare(MRR)of the nano-particles under non-contact condition between the pad and the wafer in the chemical mechanical polishing(CMP)process.Considered the impact of MRR along with various factors of CMP,such as:nano-particle size, shape,the chemical reaction of the wafer,the state of the wafer in CMP process,and so on,a new non-contact CMP model has developed for predicting the material removal in CMP.Numerical simulation analysis is carried out for exploring the impact of MRR along with various factors in CMP process after model verification,and pad effects on slurry flows in CMP system are analyzed. |
