The Relationship Between The Formation Of Texture In Vapour Deposition Process And Valence Electron Structure

Texture of the films formed in vapour deposition process makes remarkable effect on the performances of films, but the texture formation has various influencing factors. So it is difficult to control the orientation of texture. In this thesis establishes the cluster model which composes by depositing element, uses EET theory, and calculates valence electron structure of these deposited elements, then finds the relationship of the orientation of texture and valence electron structure of these deposited elements. And from an essential aspect analyzing which potential texture can be get in the condition. This has important guide effects to experiment.By establish the cluster models, relationship between the texture and the valence electron structures of bcc, hcp metals and diamond thin films vapor deposited on ploycrystal or amorphous substrate are researched. Analyzing and find:1 When bcc films are vapor deposited on ploycrystal or amorphous substrate, no texture will form if the temperature is low. At proper temperature range, the most possible texture is the (110) paralleling the surface of the substrate. Meanwhile the (112) or (100) texture may also appear, but the (111) texture will not appear. When the temperature is too high, the different textures will disappear early or later.2 when hcp films are vapor deposited on ploycrystal or amorphous substrate, the most possible texture is the (001) paralleling the surface of the substrate. Meanwhile the (102) or (012) texture may also appear. It is because their total valence electron number is close to (001) texture.3 when hcp films are vapor deposited on ploycrystal or amorphous substrate, the most possible texture is the (110) (111) and (100). Because of the nearly valence electron number, (110) and (111) textures are concurrent frequently in diamond films. And based the number of valence electron in these texture-clusters, we can deduce the (110) texture have best mechanical property.Using the interface valence electron theory of EET, the relationship between interface valence electron structure and the texture of diamond, c-BN film which be deposited on single crystal plane of silicon substrate be found. When depositing diamond film on (100) (110) and (111) single crystal plane of silicon substrate, the (100) (110) and (111) texture of diamond film is easy to appear correspondingly. The c-BN film with the orientation of (100) can appear more easily when the diamond transition film with the orientation of (001) is adopted on the silicon substrate.