Study On Device Of Magneto-active Plasma Enhanced Chemical Vapor Deposition

The Plasma Enhanced Chemical Vapor Deposition technology is widely used at present because of its better circle-plating, simpler structure of device and lower temperature of reaction. But, the density of plasma attenuates rapidly along the radial distribution in the PECVD and the chemical active in the space atmosphere is weak, so a new style of PECVD device that added electron emitter and quadrature electric-magnetic field is designed. The results indicate that with the field of plasma changing, the density of plasma can be controlled and adjusted, and the qualities of films can be improved.Fitting the electron emission source and magnetic field into the PECVD device constitutes magneto-active system. It is analyzed that the variable law among the magnetic field, electron emission source, activation source and ionization source and the effects of various parameters in the plasma field. The results indicate that the electron emission source and activation source increase the number and kinetic energy of space electrons, which greatly increases the ionization of working gas in the glow plasma field. The quadrature electric-magnetic field further bounding the charged particles what enhances the impact probability of charged particles, which is favorable for the react. In addition, Activation source, ionization source and magnetic field can increase the density of plasma field and the gas ionization. Experiments indicate that the organic thin films deposited by the magneto-active PECVD device present uniform the layers and compositions.In conclusion, it is feasible to use magneto-active PECVD, and this technology supplies a new way for depositing high-performance films.