| Lead oxide (PbO) is a traditional n-type semiconductor material, and it has many advantages, such as low growth temperature, simple preparation methods, high photoconductive and corrosion resistance properties. Because of these advantages of the lead oxide, the lead oxide thin films are widely used in the transparent conductive oxide thin films, camera tube, photoconductive detector, electrode materials, gas sensor and many other fields.In this paper, growth techniques of lead oxide thin films and recent research progresses and many applications of lead oxide in the modern technology are discussed, and the crystalline and optical properties of lead oxide thin films prepared by direct current reactive magnetron sputtering are studied.The results showed that the gas flux ratio of argon and oxygen has the great effect on the PbO thin films. The films are armorphous when the flux ratio of O2 is high, and begin to crystallize to orthorhombic PbO with the flux of O2 decreasing. The films crystalline structure change from orthorhombic PbO to orthorhombic Pb3O4 when the substrate temperature exceeding 300℃. The results of UV-VIS transmittance spectrums show that the spectrums have corresponding changes attributed to the different crystalline structure of lead oxide thin films prepared in different conditions.For improving the electrical properties of PbO thin films to adapt to the different demands, we have tried to dope the Cd atoms by double-target magnetron sputtering method, and formed the CdxPb1-xO thin films. The results showed that the resistivity of dopant PbO thin films increased with the substrate temperature, and decreased to 10-2Ω·cm when the content of Cd increased. Our results showed that the Cd doping method decreased the resistivity of PbO thin films in a very large degree and indicated its potential applications of electrode materials.
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