The Preparation And Characterization Of SnO₂: Sb Films Coated On SiO₂-Coated Glass By Sol-Gel Method

A comprehensive introduction of energy saving coating glass, especially low emissivity (low-E) glass has been given including the development, energy saving characteristic, types and preparation methods. It shows that antimony doped tin dioxide thin film can be used as dominating film in energy saving coating glass for its good electric conductivity, excellent optical properties and cheap cost and easiness to handle.Using metal salts SnCl₂·2H₂O and SbCl₃ as Precursors, ethanol as solvent , acetic acid as catalyst, thin films of antimony-doped tin oxide were deposited on SiO₂ coated soda-lime glass by the sol-gel dip coating method.It has been found that the heat-treatment temperature, film thickness and antimony-doped level have strong influence on the structure and composition of SnO₂ films. The SnO₂ crystals exist as tetragonal rutile structure by Sol-gel method. The optimum heat-treatment temperature is 773K, C of sol didn't burn completely under 773K, There were C-0 and C=O groups on the surface of the films annealed at 723K and 673K. While Na+ will appear on the surface of the film and decrease the conductivity of the films above 773K. Antimony-doped level have strong influence on the structure and property. Sb prevent from the growth of the crystals. The full-widths at half-maximum increase with increasing of the content of Sb. The value of Sb³+/(Sb⁵++Sb³+) is bigger and bigger. It shows that SnO₂ films with suitable doping level have favorable electrical conductivity and higher visible transmittance and high infrared reflectance, the optimum electrical property and infrared reflectance of the films is 5at% antimony-doped . the thickness of the films have also big influence on the structure and property, higher ticker films can benefit the crystallization of SnO₂ crystals. But too high thickness and will do harm to the smoothness of the films. It can be conclude: The sheet resistance can reach 78Ω/口, the number of carriers is l.lx10²1 cm^-3 with mobility 1.46cm2V^-1s^-1, and the visible transmission is 70% with Infrared reflection about 90% after the SnO₂:Sb film has been treated under 773K temperature, with Sb doping level 5%, dipping 8 times.