Influence Of Deposition Temperature On The Structure & Properties Of A-C: F Films

As one of promising interlay dielectrics used in the future ULSI, fluorinated amorphous carbon film (a-C: F) has been attracted intensively. All kinds of techniques for the deposition of a-C: F films were introduced. Many studies on electrical property, therma stability, etc for the a-C: F films were carried out. However, few reports on the correlation between the deposition temperature and film properties were made. In this thesis, Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500癈 in vacuum ambience in order to investigate their thermal stability, optical and electrical properties with deposition temperature. Results indicate that films deposited at high temperature have less CFx bonding and more cross-linking structures thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.