Study Effect Of Substrate Temperature To Thin Film Growth By Monte Carlo Simulation

Thin film materials is an important function material, have an important application in modern high-technique. The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials. Modeling and simulation based on computer technology has been an important method for studying on thin film growth.In this article, the model of the defect substrate has been instituted based on the experiment results, reference the other thin film growth model and by using the theory of thin film growth process of thin films have been simulated using Monte Carlo method. Effect of substrate temperature, deposited particles energy, deposited rate and particles migrating step to early stage Cu/Cu(100) thin films growth have been studies, and research results are in good agreement to the experimental results.First, the development of the thin film growth simulation is introduced. The thin film growth simulation methods in nation and abroad and the developing trend are discussed. Sub-monolayer film and multilayer film are explained. Nucleation capillary and three thin film growth simulation methods are introduced. And three methods are compared. Actually, substrate is heterogeneous and have defects. Diffusing or evaporation is decided by probability. Thus, the basic principle of thin film growth simulation is given.Secondly, the model of the defect substrate has been instituted. In this model, periodic boundary condition have adopted; the particle diffusion on substrates , along the island edges and between various layers, is take into account; the interaction between particles has been investigated using Morse potential; diffusing or evaporation is decided by probability.Finally, Cu/Cu(100) thin films growth have been simulated. Through analysis figure of thin film growth, the effect of substrate temperature, deposited particles energy, deposited rate and particles migrating step to Cu/Cu(100) thin film growth is studied.And energy deposition particles and particles migrating steps are compared with substrate temperature. Simulation result is compared with actual result of, validated rationality of model.