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Prepared And Property Of Re-Doped ZnTe Nano-Thin Film

Posted on:2010-10-10Degree:MasterType:Thesis
Country:ChinaCandidate:Z X LiFull Text:PDF
GTID:2120360278967681Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
ZnTe thin films are prepared by vacuum evaporation on glass substrate.The thin films were Dy-doped and Pr-doped by double-source evaporation,and were annealed at 300℃,400℃,500℃in nitrogen at 10.The characteristics of the samples were tested by X-ray diffraction instrument,AFM,ultraviolet-visible spectrophotometer, and Measure Film instrument and so on.According to the result of the test,the sample' s crystal structure and optical characteristic were influence annealing temperature,value of Zn:Te,doping content,technological conditions.we analysed and optimized the preparation process of the ZnTe thin film.The result showed that the ZnTe thin films was best when Zn:Te=1:0.7,annealing temperature T=500℃.we can obtain pure polycrystalline ZnTe thin films.At the same time,the influences of the Pr-doping and Dy-doping on the ZnTe thin film was studied.The influence of rare-earth doping on the crystal structure and optical characteristics of the ZnTe thin films was evident.The combination of ZnTe was restrained by rare-earth doping,That doping of Dy not changes the sample' s crystal structure.Dy-doping led to the grain size decreased lattice constant and cell volume decreased and the optical band gap decreased evidently,optical transmission decreased.That doping of Dy changes the sample' s type of conduction.That doping of Pr not changes the sample' s crystal structure.Pr-doping led to the lattice constant and the crystal cell volume decreased, optical transmission decreased,and the optical band gap increased slightly.That doping of Pr not changes the sample's type of conduction.
Keywords/Search Tags:vacuum evaporation, rare-earth doping, ZnTe thin film, Structure, optic characteristics
PDF Full Text Request
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