The Study On The Structure, Transparence And Electricity Properties Of Transition Mental Doped ZnO Films

ZnO films, a directly wide band gap semiconductor, its the lattice parameters are a=0.32533nm, c=0.52073nm. Due to its wide band gap (3.27eV) and large excitonic binding energy (about 60meV), It can be used in solar cells, piezoelectric devices, optoelectric devices, transparent conducting electrodes and gas sensors. The characteristics of ZnO films can be modulated by the appropriate dopant. Specially.The Cu-doped ZnO films and Mn-doped ZnO films were prepared by the radio frequency magnetron sputtering on different substrates. research the effects of matal dopant on properties of ZnO films. The result are the following:1. The Cu-doped ZnO films were prepared by the radio frequency (RF) magnetron sputtering techniqueon ITO glass and quartz substrates. The structure and light transmittance of Cu-doped ZnO films were discussed in details. The results indicate that Cu doping enhances the intensity of the ZnO (002) peak. The transmittance of the Cu-doped ZnO films are decreased with the increasing of Cu content. In additional, electric resistivity increases with the increasing of Cu content.2. The Mn-doped ZnO films were prepared on Si and quartz substrates, research the effects of Mn dopant on the structure, transmittance properties and electric properties of ZnO films. The XRD patterns of Zn1?xMnxO films indicated that Mn-doped don't change the wurtzite structure of ZnO, all the simples have strong preferred orientation with c-axis normal to the substrate,but the FWMH of (002) become small. Optical transmission measurements have revealed that the average transmission in the 400~800nm range is very high, pure ZnO film as high as 90% and Mn-ZnO as high as 80%. Meanwhile, the electric resistivity of ZnO increase rapidly with increasing the content of Mn, which may be due to nanocrystalline nature of the film.