Fabrication Of ZnO:In Thin Films And Study Of Photoelectric Properties

ZnO thin films were grown on glass substrates by ultrasonic spray pyrolysis,after optimizing growth conditions,we also prepared ZnO:In thin films on glass and high-resistivity n-Si(100) substrates respectively, we prepared ZnO:In thin films on glass by magnetron sputtering at last. XRD,FE-SEM,EDX,XPS,step profiler,UV-Vis,Hall effect mesurement and Four probes were employed to analyze the effect of depositing temperature,substrate material and sputtering power on crystal structure,morphology,composition,content,element valence state, deposition rate,optical and electrical properties.The results show that:(1)The optimized deposition condition of ZnO thin films which are prepared by ultrasonic spray pyrolysis is that:substrate temperature is above 450℃,distance between substrate and spout is 6cm,growth time is 30min.(2)In the ZnO:In thin films which are prepared by ultrasonic spray pyrolysis on glass substrates between 400～475℃,with the increase of substrate temperature,all of(100),(002) and(101) diffraction peak had the trend of aggrandizement,but(002) is stronger.The ZnO:In thin films are dense and smooth.XPS reveals that In is doped in ZnO very well,and partly substitute Zn,bind to O.The higher of temperature,the lower of deposition rate is.With the increase of substrate temperature,the ultra-violet cutting-off edge show blue shift.Optimal growth conditions confirm that the resistivity reach 0.130Ω·cm and carrier concentration reach 1.040×10²⁰cm^-3.Compared with the ZnO:In thin films,the preferential orientation of (100),(101) is for all the films deposited on silicon substrates.At the same substrate temperature,the resistivity of all the ZnO:In thin films prepared on silicon substrates are higher than that on the glass substrates.(3) All of the ZnO:In thin films fabricated by magnetron sputtering are polycrystalline with the hexagonal crystal structure which has a strongly preferred orientation of c axis.In the visible range,the transmittances of samples are above 80%,with the increase of sputtering powers,the ultra-violet cutting-off edge show blue shift.The sheet resistance of films decrease with the increase of sputtering powers,the minimum is 26Ω/□。...