Research On Raman Scattering Induced By High-Irradiance Laser

The main goal of laser soft damage is detector, Silicon is a very important detector material. Raman spectra characterizes the vibrational level and the vibrational level populaions distribution, to interaction of wide pulse laser with material, Raman spectra is the important means to research on sillicon photodetector by laser damage.In this paper, two softwares——Gaussian and G-View were used to simulate the Raman spectra of the single crystal silicon under normal temperature and high temperature by choosing appropriate method and the basis set, to confirm the assignment of Raman peaks. and also its very weak intensity of high frequency points. At the same time, the structure of the silicon was analyzed and the position of peak was pointed out. The results show that both software is a good means to analyze Raman spectra. In the experiment, the laser-induced damage behavior of single crystal silicon was investigated with a Nd:YAG laser at 532nm, from the damage morphologies observed damage mechanism——thermal damage, and single crystal silicon exciting spectrogram at 110mJ, 190mJ, 219mJ laser radiation was analyzed. The thermal stress damage threshold of semiconductor materials induced by laser beam was caculated.