Studies On The Properties Of The Light Scattering Of Detachable Anisotropy Random Surfaces

The random surfaces as important parts make up of nature. It is very important to study it, as it is essential for many aspects ,such as the dynamics of film's growth,rupture aroused by concussion of orb,the design of micro-electronics component and so on. So many people have payed attention to studying about random surfaces for a long time. The rough fractal framework exist generally in random surfaces in limit locate. But the frame liked grain take on the surfaces in long scale. The model of self-affine random surfaces can describe both the self-similitude in height of surfaces and the frame liked grain. The model is accepted an adopted generally at present. The study of this aspects is focus on the isotropy random surfaces. And also extremely progress had being acquired thorough a lot of theories and experiments studies. Many methods are used to study random surfaces. There are also some people whose studies focus on the characteristic of anisotropy random surfaces. People established he growth-front model and deduced many results such as auto-correlation function,high-high correlation function,power spectrum,half-width of scattered profiles and so on. But it is primary on the study of anisotropy random surfaces. The theory studies and experiments about it are not perfect enough.The paper lay out a new way to measure scattered profiles according Kirchhoff's diffration theory. We also measured the light intensity scattered from Si(100) wafer by The average technique with gated integration and analysised the results. We also measured the parameters of Si(100) wafer's surfaces by AFM. And we simulate scattering profiles by the data of height of sample measured by AFM . We prove the method of measure scattering profiles is feasible by comparing between outcome by simulate and measure. The whole paper is divided into five chapters.Chapter 1 gives a summary and review of the description of random surfaces and its measurements.In chapter 2, we present the generic expression for the half-width of the intensity profiles scattered from the self-affine fractal random surfaces. The self-affine fractal random surface and light scattering properties are simulated. By fitting these simulated profiles with a symmetrical decay function we obtain the variation of the half-width of the corresponding profiles versus the wave vector. Based on this variation and metrical results of light scattering, the lateral correlation lengthξand the roughness exponentαof a random surface sample can be extracted synchronously. And the way to pick-up the parameter of random surface is also introduced simply .Chapter 3 introduces the average technique with gated integration to collect the profile of scattered light intensity. We discuss the principle of Boxcar and work process of the system in detail. We also compared the intensity obtained in experiment through gated integration and not. The primary content of chart 4 is: The morphology of Si(100) wafer is studied with atomic force microscope. We find the height-height correlation function and the auto-correlation function. And we also pick up the parameter of the surface . it is found that the sample is anisotropy random surface. The curve of position of scattering intensity is presented. And it was applied into the measurement on the scattering profiles of the sample's surface. The relation between scattering profiles and the angle of incidence is found by analysising the result measured in the experiment. We simulate scattering profiles by the data of height of sample measured by AFM ,and compare the outcome by simulate and measure.In chapter 5, we give the summary of this paper and put forward the further goal.