Experimental Investigation Of Carrier Transport Characteristic In Amorphous Materials Of Se And Alq3

Recent years, X-ray imaging detector has been rapid development and played an important role in the field of medicine. X-ray imaging detector include amorphous silicon-type, amorphous selenium-type and CCD type. Comparatively speaking, the type of amorphous selenium has a high conversion efficiency, sensitivity. However, because of the electrical transport properties of charge-carrier in amorphous selenium dependent of temperature, amorphous selenium has certain shortcomings of the X-ray detectors sensitive to temperature and conditions of use and poor adaptability restricted. This will has a certain impact on the performance of the device. Nowadays the carrier at different temperatures of transport model coverage is relatively small, therefore, one of the main thesis of this research is the charge-carrier transport properties and the dependence of temperature. Major work will include further testing TOF system perfect on the original basis, give the standards of conditions on TOF experiment; determine the parameters about Boxcar standards, the standard of judgment the sampling resistor and optical pulse energy on the experiment of measurement the charge-carrier mobility by time-of-flight method; the preparation on amorphous test sample, finally, measure the charge-carrier mobility of amorphous sample under appropriate experimental conditions, and discuss the carrier mobility rate with temperature and the variations of the field, give the carrier transport model. From the experiment concludes: in the range of temperature 25℃～65℃and higher field strength, the drift of charge-carrier obey the trap model.Meanwhile, the Organic Electroluminescent Device (OLED) have also shown a momentum of rapid development. As an emerging field, the domestic and international market prospect is very wide. As OLED materials, 8-hydroxyquinoline aluminum also demonstrates quite broad application prospects. Because the study of characteristic about transport on 8-hydroxyquinoline aluminum is relatively small, in particular carrier mobility and temperature relationship. In this paper, as another major study, this paper give the dependence of mobility on temperature under the range of 25℃～65℃temperature about 8-hydroxyquinoline aluminum, and gives the charge-carrier transport mode under the temperature range and high field strength.Based on the conditions of selecting the sampling resistor and the optical pulse energy appropriately, we measure the charge-carrier transport properties in the temperature range of 25℃～65℃about amorphous selenium and 8-hydroxyquinoline aluminum materials by TOF system established by our own laboratory, give the relations between mobility and temperature; meanwhile give the carrier mobility of field dependence. Experimental results showed: the choice of experimental conditions strictly is to use time-of-flight experiment of measuring the charge-carrier mobility; also showed that the temperature range the experimental measurement and high intensity electric field, their carrier transport were subordinated to the shallow-trap model of these two test samples.Comparative results showed: although these two materials include inorganic and organic, but they are semiconductor materials, the same means of preparation that lead to the same aggregation of atom or molecule in the internal sample, with the amorphous, so the carrier transport characteristic of the two samples are same.