Electron Irradiation Of CdTe Solar Cell And Interrelated Thin Film

It is considered that Thin-film Solar Cell would become the corpus of Space Solar Cells in the futrue. Particularly to moonlet and spacecraft in low orbit,Thin-Film Solar Cells have many advantages such as the higher ratio of power to weight, suitability for using soft substates can be used, facility of being various shaped,etc. This thesis studied the effects of electron Irradiation of different energies and fluences on CdTe Thin-film Solar Cells and correlative materials. It could provide gist for the development of materials and structures of CdTe Thin-film Solar Cell for space use.The SnO2:F thin films were irradiated by the 1 MeV electrons of different fluences. The results show that the Hall coefficient increased , the carrier concentration and mobility decreased nonlinearly.When the ZnTe: Cu thin film layer was irradiated by the electrons , the carrier mobility and the Hall coefficients decreased obviously, and when the irradiation fluence got to 1x1016cm-2, declined 97.8%.But the carrier concentration increased greatly by the aggrandizement of the irradiation fluence .The CdTe Thin- film Solar Cells were irradiated by electrons of 1MeV energy. The results indicate that the irradiation hardly had effect on Voc,and the short-circuit electric current density of cells was lowered because of the change of glass'colour. Irradiation might cause the edge short circuit to turn worse. These factors together cause the decrease of cells'efficiency; After irradiation ,the diode ideal factor didn't change obviously, ranged from 2.3 to 3. The cell capacitance decreased about 1nF/cm2 after radiation when the direct bias voltage was higher than 1V.The CdTe Thin-film Solar Cells were irradiated by the electrons of 0.5MeV energy.The results indicate that the cell capacitance decreased about 0.01 nF/cm2 when the direct bias voltage was higher than 0.5V . While the irradiation fluence aggrandized after, the cell capacitance increased .When the irradiation got to 1x1016/cm2, increase range enlarged suddenly.The Band-gap density of cells decreased obviously after irradiation. As the fluence got to 1.5x1013/cm2,NDL decreased about 3x 1013/cm3.Along with the aggrandizement of irradiation fluence, increase range appeared ruleless change.