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Coexistence Of Lateral Photovoltage And Magnetism In Co/Mn/Co Film Deposited On Si Substrate

Posted on:2009-01-09Degree:MasterType:Thesis
Country:ChinaCandidate:L Z KongFull Text:PDF
GTID:2120360242476966Subject:Optics
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Spintronics has got much progress as a separate discipline since the magnetoresistance is discovered in the late 20th century. The focus of spintronics is the research about interaction between the electron spin and the electron movement in magnetic ordered materials and its actual application. The spintronics has been applied in audion, high-speed and high-density micro-spin head, magnetic sensor and spin- valve MRAM at present. The lateral photovoltage is the carriers difference due to the ununiformly illuminated light illumination on the semiconductor junction. Position sensitive detector is based on this principle and has been widely used in industry, military and science research.Lateral photovoltage (LPV) and positive magnetoresistance are both observed in Co/Mn/Co/c-Si structure. The LPV shows a large sensitivity of 10 mVmm?1 as the spot is moved on the film surface. An apparent 2.8% (at 4.2K) positive magnetoresistance is also found in the structure and is explained based on the enhanced scattering at interface. The LPV is discussed in terms of the metal–semiconductor junction that exists between the film and the Si substrate. The combined properties add functionality to the single magnetic or optic property and facilitate matters for dual role devices that are both sensitive to the light and magnetic field.
Keywords/Search Tags:Lateral photovoltage, magnetoresistance, Position sensitive detector, spin scattering
PDF Full Text Request
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