The Study On The Characteristics Of ZnO Film Prepared By RF Magnetron Sputtering

Zinc oxide, one of the most interestingⅡ-Ⅳcompound semiconductors, is a direct semiconductor of wurtzite structure. It is a wide-band-gap of 3.37eV and has a large excitation binding energy of 60meV. ZnO thin films have many potential applications in various domains, such as surface and bulk acoustic wave devices(SAW) and piezoelectric parts, sense organ and transparent conducting films/electrodes, and gas sensor. In recent years, wide-band-gap semiconductor compounds have attracted a great deal of attention because of the intense commercial interest in developing practical short-wavelength semiconductor diode lasers for the huge market needs, the researches and developments of ZnO films have attracted great attention and interest from researchers and the industry.To achieve the requirements of different applications, a number of techniques have been used for fabrication of ZnO thin films, including magnetron sputtering, metal organic chemical vapor deposition, pulsed laser deposition, molecular beam epitaxy, spray pyrolysis, and sol-gel process, reactive deposition and thermal oxidation of Zn films. Each of these techniques has its merits and demerits. The key to the application of ZnO films is high quality for the purpose, and the cost must be considered. For various applications, highly preferred c-axis orientation of ZnO films is usually important. Uniform and compact ZnO films with the highly preferred c-axis orientation and the high transmittance in visible region can be prepared by magnetron sputtering under optimized condition. It is the most investigated and widely used method. This thesis studied how to obtain outstanding ZnO Films by RF Magnetron sputtering. The content include: Influences of technical conditions on the structure, surface morphology, and light emitting of ZnO films by RF Magnetron Sputtering, luminescence mechanism of ZnO. Structural properties of ZnO are studied By X-ray Diffraction and Atomic Force Microscopy(AFM), light Emitting characteristic is tested by photoluminescence experimentation.We got good crystallization ZnO films according to the process conditions: sputtering power is about 100W, the pressure is 2×10-4pa, the substate is Si (100) substate-to-target separation is 60mm, deposition time is 60 min, the substrate temperature is 200℃and Ar: 02 =2:3. Thermal annealing can improve the structural properties of ZnO, Highly c-axis oriented ZnO films on (100) silicon substrate were obtained by RF Magnetron sputtering. But in light Emitting experimentation, we just observed a obvious 350 nm photoluminescence(PL) peak and two feeble PL peaks in 480 nm, we discuss this result and clarify bur viewpoint.