| In the present-day, micro-electronic industry is dominated by silicon-based devices. Because SiO2 has many good qualities such as easy-fabricated, best hot stability, higher wet-resistance, it becomes the preferred material for grid dielectric and capacitor dielectric in the transistor. With the ever-continuing drive toward miniaturization, the layer of SiO2 becomes more and more thin. Then, more defects will come forth in the layer of SiO2. More defects lead the electric current leakage phenomenon to increase gradually. To enhance the electrical performance of the electron devices, we must reduce defects in SiO2 layer and raise the quantity of the layer. At present, fundamental questions about the formation, evolution, and defects in SiO/Si interface remain not fully understood. Here, we examine the value of a newly emerging technique for analyzing defects in silicon-based systems, positron annihilation spectroscopy (PAS). The main contents of this work were as follows:Firstly, four SiO2-Si samples with deferent thickness of layers and quartz SiO2 have been measured by two-detector coincidence system of Doppler broadening of positron annihilation radiation. The ratio curves illustrate that the sample with thicker silicon oxide layer has higher oxygen contents and a... |
