| Quantum well intermixing(QWI) is a promising technique in photonic integrated circuits (PIC) and optoelectronic integrated circuits (OEIC) manufacture because of its simple technology and the efficiency of tuning the band gap for quantum wells. There are several methods to perform QWI: Impurity-Induced Disordering (IID); Implantation Induced Composition Disordering (IICD); Photon Absorption Induced Disordering (PAID) and Impurity-Free Vacancy Disffusion (IFVD).In this paper, in order to compare the effect of QWI between IICD and IFVD, we first performed the QWI for an InGaAsP/InP MQWs structure with the same emission wavelengths by phosphorus ion implantation and SiO2 coating. Second, to investigate the deep effect in IICD, we designed a double quantum well structure with two different emission wavelengths.In the first experiment, in order to investigate the effect of QWI between IICD and IFVD, we prepared three groups of samples: The first group is only for P+ ion implantation; the second is for P+ ion implantation following SiO2 coating in thick of 200 nm by plasma enhanced chemical vapor deposition (PECVD); the third is for a SiO2 coating in thick of 200 nm as a mask and then P+ ion implantation. All the samples are annealed at 780℃ for 30 seconds under pure nitrogen protection using a lamp rapid thermal annealing furnace. The photoluminescence (PL) results indicate that the second group of the sample possesses the biggest bang gap blueshift, and then is the second group, the third group has the smallest blueshift. The blue shifts of band gap for all three groups samples are increasing firstly and then saturated when the ion dose reaches 5×1013/cm2. The optimal dose for realizing QWI is 1×1013/cm2. The results also show ion implantation plays a dominant role in QWI in the combination process of ion implantation and SiO2 film coating, however, the SiO2 film also promotes the intermixing of QWs.In order to investigate the influences of ion implantation depth in QWI, we have... |
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