Investigation Of Preparing Nanocrystalline Thin Film By Penning-type Discharge Plasma Technique

In this paper, preparing nanocrystalline nitride thin films has been investigated by using Penning-type Discharge (PD) .PD, as a new method of preparing nitride thin films, has been studied. In order to control the process of materials' surface modification promptly, we analysis the plasma emission spectroscopy in the conditions of different gas pressure and voltage .The result is essential for its application to surface modification of materials.APD source was designed and fabricated in our laboratory based on our previous work. The cathode and anode bodies were made of aluminum. Aluminum nitride films were synthesized on Si(l00 ) substrates at room temperature by using penning-type discharge plasma sputtering technique. The ionized states of aluminum and nitrogen contributing to formation of the A1N bind were investigated. The surfaces morphology of the films indicated that very smooth and uniform A1N films have been obtained. Raman scattering spectral measurements were used to characterize the obtained thin films. The E₂ mode at 303cm^-1 , theE₁(LO) mode at 821cm^-1 and the E₁(TO) mode at 614cm^-1 were revealed.Another PD source was designed and fabricated in our laboratory based on our previous work. The cathode and anode bodies were made of graphite.Carbon nitride films were synthesized on Si(100) substrates at room temperature by using penning-type discharge plasma sputtering technique in a pure N₂ discharge.The surfaces morphology of the films were characterized by using AFM. The films showed an amorphous-like appearance except for some isolated crystalline grains.The bonding structures of the membrane were characterized by using both X-ray photoelectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy showed that synthesized films were constructed primarily from sp2 CN and sp3 CN bonds. The fact that N content is very high in the films is associated with the intension of the films.All results indicate that the PD technique is a very effective way to fabricate carbon nitride films. The synthesized films have a multi-crystal structure and a high N content.The PD has the merits of simple structure, low discharge voltage, and high ion density.As a plasma source, it can be used to prepare carbon nitride films on big sized products, so t has a good prospect in industry application.In this paper, preparing nanocrystalline carbon nitride thin films has also been investigated by using dc Hollow Cathode Discharge (HCD).The surface morphology of the film indicated that very smooth and uniform CNX films have been fabricated.Raman scattering spectral measurements revealed that sp3 CN bonds content is very high in the films.